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| IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications Note: All data is per the IXZ1210N50L single ended device unless otherwise Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 VDSS ID25 = = 500 V 10 A Maximum Ratings 500 500 20 30 10 60 16 TBD 5 V V V V A A A mJ V/ns 125V (operating) 175MHz >200 Per Device Total V/ns PDC PDHS PDAMB RthJC RthJHS Tc = 25C, Derate 6.0W/C above 25C Tc = 25C 180 150 360 300 10 W W W C/W C/W max. V Features 0.83 1.00 min. 0.42 0.50 typ. * IXYS RF Low Capacitance Z-MOSTM Process VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250 VGS = 20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C 500 3.5 4.83 6.5 100 50 1 1.0 3.8 -55 +175 +175 -55 + 175 300 4 V nA A mA S C C C C g * Very low insertion inductance (<2nH) Advantages * High Performance RF Package * Easy to mount--no insulators needed * Standard RF Package (1) Thermal specifications are for the package, not per transistor VGS = 20 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 50 V, ID = 0.5ID25, pulse test 1.6mm(0.063 in) from case for 10 s IXZ12210N50L RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. Ciss Coss Crss Td(on) Ton Td(off) Toff VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 (External) VGS = 0 V, VDS = 0.8 VDSS(MAX), f = 1 MHz typ. 383 60 11 16 4 5 6 max. 404 105 13 pF pF pF ns ns ns ns 366 48 6 VHF COMMUNICATIONS Gps VDD= 50V, Pout=200W, f=175MHz min. typ. TBD max. db 60 TBD % Drain Efficiency VDD= 50V, Pout=200W, f=175MHz Load Mismatch VDD= 150V, Pout=300W, f=175MHz TBD 3T MRI Gps(1) VDD=120V, POUT=475W, F=128MHz min. typ. TBD TBD max. db % Drain Efficiency VDD= 50V, Pout=200W, f=175MHz IXZ12210N50L RF Power MOSFET IXZ12210N50L Capacitance Verses Vds 10000 Capacitance in pF 1000 100 10 1 0 50 100 150 200 VDS 250 300 350 400 450 Coss Crss Ciss IXZ12210N50L RF Power MOSFET Doc #dsIXZ12210N50L REV X1 (c) 2006 IXYS RF IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 A IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf.com Web: http://www.ixysrf.com |
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